NTMC083NP10M5L دیتاشیت

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مشاهده دیتاشیت NTMC083NP10M5L	دانلود دیتاشیت

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RoHS: true
Type: 1PCSN-Channel&1PCSP-Channel
Category: Triode/MOS Tube/Transistor/MOSFETs
Datasheet: onsemi NTMC083NP10M5L
Operating Temperature: -55°C~+150°C@(Tj)
Power Dissipation (Pd): 3.1W
Total Gate Charge (Qg@Vgs): 3nC@4.5V;8.4nC@10V
Drain Source Voltage (Vdss): 100V
Input Capacitance (Ciss@Vds): 222pF@50V;525pF@50V
Continuous Drain Current (Id): 4.1A;3.3A
Gate Threshold Voltage (Vgs(th)@Id): 1.9V@28uA;3V@28uA
Reverse Transfer Capacitance (Crss@Vds): 2.6pF@50V;4pF@50V
Drain Source On Resistance (RDS(on)@Vgs,Id): 59.4mΩ@10V,1.5A;109mΩ@110V,1.5A
Package: SOIC-8
Manufacturer: onsemi